PJP24N10 Datasheet, Mosfet, Pan Jit International

PJP24N10 Features

• Mosfet
• RDS(ON), VGS@10V,IDS@30A=24mΩ
• Low On Resistance
• Excellent Gate Charge x RDS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current

PDF File Details

Part number:

PJP24N10

Manufacturer:

Pan Jit International

File Size:

209.45kb

Download:

📄 Datasheet

Description:

100v n-channel enhancement mode mosfet.

TAGS

PJP24N10

Pan Jit International

📁 Related Datasheet

PJP20N65D - N-Channel MOSFETS (Potens semiconductor)
650V N-Channel MOSFETS PJP20N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJP2N60 - 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low .

PJP2NA60 - 600V N-Channel MOSFET (Pan Jit International)
PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/d.

PJP2NA90 - 900V N-Channel MOSFET (Pan Jit International)
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 900V N-Channel MOSFET Voltage 900 V Current 2A Features  RDS(ON), VGS@10V,ID@1A<6.4Ω  High switchin.

PJP10N60 - 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Swi.

PJP10N65 - 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Swi.

PJP12N65 - 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • • • • • • Low ON Resistance Fast Swi.

PJP13N50 - 500V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP13N50 / PJF13N50 500V N-Channel Enhancement Mode MOSFET FEATURES • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • • • • • • Low ON Resistance Fast Sw.

PJP15N65D - N-Channel MOSFETS (Potens semiconductor)
650V N-Channel MOSFETS PJP15N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJP1N80 - 800V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switchin.