Datasheet4U Logo Datasheet4U.com

PJP10N60

600V N-Channel Enhancement Mode MOSFET

PJP10N60 Features

* 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A

* Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 20

PJP10N60 Datasheet (208.68 KB)

Preview of PJP10N60 PDF

Datasheet Details

Part number:

PJP10N60

Manufacturer:

Pan Jit International

File Size:

208.68 KB

Description:

600v n-channel enhancement mode mosfet.

📁 Related Datasheet

PJP10N65 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJP12N65 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJP13N50 500V N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJP15N65D N-Channel MOSFETS (Potens semiconductor)

PJP1N80 800V N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJP1NA80 800V N-Channel MOSFET (Pan Jit International)

PJP20N65D N-Channel MOSFETS (Potens semiconductor)

PJP24N10 100V N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJP2N60 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJP2NA60 600V N-Channel MOSFET (Pan Jit International)

TAGS

PJP10N60 600V N-Channel Enhancement Mode MOSFET Pan Jit International

Image Gallery

PJP10N60 Datasheet Preview Page 2 PJP10N60 Datasheet Preview Page 3

PJP10N60 Distributor