PJP13N50 Datasheet, Mosfet, Pan Jit International

PJP13N50 Features

• Mosfet
• 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A
• Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Ava

PDF File Details

Part number:

PJP13N50

Manufacturer:

Pan Jit International

File Size:

219.41kb

Download:

📄 Datasheet

Description:

500v n-channel enhancement mode mosfet.

TAGS

PJP13N50

Pan Jit International

📁 Related Datasheet

PJP10N60 - 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Swi.

PJP10N65 - 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Swi.

PJP12N65 - 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • • • • • • Low ON Resistance Fast Swi.

PJP15N65D - N-Channel MOSFETS (Potens semiconductor)
650V N-Channel MOSFETS PJP15N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJP1N80 - 800V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switchin.

PJP1NA80 - 800V N-Channel MOSFET (Pan Jit International)
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,ID@0.5A<16Ω  High switchi.

PJP20N65D - N-Channel MOSFETS (Potens semiconductor)
650V N-Channel MOSFETS PJP20N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJP24N10 - 100V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP24N10 / PJF24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(.

PJP2N60 - 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low .

PJP2NA60 - 600V N-Channel MOSFET (Pan Jit International)
PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/d.