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SiC10A065T - SILICON CARBIDE SCHOTTKY DIODE

Features

  • Temperature Independent Switching Behavior.
  • Low Conduction and Switching Loss.
  • High Surge Current Capability.
  • Positive Temperature Coefficient on VF.
  • Fast Reverse Recovery Mechanical Data.
  • Case: Molded plastic, TO-220AC.
  • Marking: 10A065T Benefits.
  • High Frequency Operation.
  • Higher System Efficiency.
  • Environmental Protection.
  • Parallel Device Convenience.
  • Hard Switching & High Reliability.
  • High Temperature.

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Datasheet Details

Part number SiC10A065T
Manufacturer Pan Jit International
File Size 449.26 KB
Description SILICON CARBIDE SCHOTTKY DIODE
Datasheet download datasheet SiC10A065T Datasheet
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SiC10A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-220AC  Marking: 10A065T Benefits  High Frequency Operation  Higher System Efficiency  Environmental Protection  Parallel Device Convenience  Hard Switching & High Reliability  High Temperature Application TO-220AC Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.
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