2SA886 - Silicon PNP epitaxial planar type Transistor
Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 0.1 3.2±0.2 Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC T
2SA886 Features
* 11.0±0.5 1 2SA0886 PC Ta 1.6
* 4.0
* 3.5 IC VCE TC=25˚C IB=
* 40mA
* 35mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10
* 10 Collector power dissipation PC (W) Collector current IC (A) 1.2
* 3.0
* 2.5
