2SA886 Datasheet - Panasonic Semiconductor

2SA886 Silicon PNP epitaxial planar type Transistor

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 0.1 3.2±0.2 Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC T.

2SA886 Features

* 11.0±0.5 1 2SA0886 PC  Ta 1.6

* 4.0

* 3.5 IC  VCE TC=25˚C IB=

* 40mA

* 35mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10

* 10 Collector power dissipation PC (W) Collector current IC (A) 1.2

* 3.0

* 2.5

2SA886_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

2SA886

Manufacturer:

Panasonic Semiconductor

File Size:

95.42 KB

Description:

Silicon pnp epitaxial planar type transistor.

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2SA886 2SA886 Silicon PNP epitaxial planar type Transistor Panasonic Semiconductor

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