* 11.0±0.5 1 2SA0886 PC Ta 1.6
* 4.0
* 3.5 IC VCE TC=25˚C IB=
* 40mA
* 35mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10
* 10 Collector power dissipation PC (W) Collector current IC (A) 1.2
* 3.0
* 2.5
2SA886
Panasonic Semiconductor
95.42 KB
Silicon pnp epitaxial planar type transistor.
Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0..
📁 Related Datasheet
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2SA882
DESCRIPTION ·With TO-3 package ·Excellent Sa.
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DESCRIPTION ·High Power Dissipation-
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2SA885 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA885
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.
/ Features
VCE(sat), 2SC184.
2SA885 - Silicon PNP epitaxial planar type Transistors
(Panasonic)
Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1846
φ 3.16±0.1
8.0+–.
