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2SA921 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • q q High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25˚C) Ratings.
  • 120.
  • 120.
  • 5.
  • 50.
  • 20 250 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5±0.5 0.45.
  • 0.1 1.27.

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Datasheet Details

Part number 2SA921
Manufacturer Panasonic Semiconductor
File Size 37.29 KB
Description Silicon PNP epitaxial planer type Transistor
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Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25˚C) Ratings –120 –120 –5 –50 –20 250 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.
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