* 3
* High transition frequency fT
* S-Mini type package, allowing downsizing of the equipment 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 0.2±0.1 (0.65) (0.65) 1.3±0.1 /
* Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Ratin
2SC3932
Panasonic Semiconductor
259.98 KB
Silicon npn transistor.
Transistors
2SC3932
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
0.3+
*00..01
Unit: mm
0.15+
.
📁 Related Datasheet
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(GME)
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
High transition frequency fT. Optimum for RF amplification of
Pb
Lead.
2SC3930 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SC3930
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(0.425)
For high-frequency amplification Complementary to 2SA1532
0.3+–00..01
Unit: mm
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Optimum for RF amplification of FM/AM radios. High transition frequency fT.
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Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lea.
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SOT-323
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2SC3930G - Silicon NPN Transistor
(Panasonic)
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This product plies with the RoHS Directive (EU 2002/95/EC).
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Silicon NPN epitaxial planar type
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2SC3931 - Silicon NPN Transistor
(Panasonic Semiconductor)
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2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
0.3+–00..01
Unit: mm
0.15+–00..0150
(0.425)
■ Features
3
.
2SC3931G - Silicon NPN Transistor
(Panasonic)
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This product plies with the RoHS Directive (EU 2002/95/EC).
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplifica.
