* q q q 4.0 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 400 5 10 6 40 2 150
* 55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Ab
2SD1446
Panasonic Semiconductor
63.50 KB
Silicon npn transistor.
Power Transistors
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±.
📁 Related Datasheet
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(INCHANGE)
isc Silicon NPN Power Transistor
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DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Collector-Emitter Breakdown Volt.
2SD1440 - Power Transistor
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isc Silicon NPN Power Transistor
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DESCRIPTION ·High Breakdown Voltage-
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(SavantIC)
SavantIC Semiconductor
Product Specification
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..
DESCRIPTION ·With TO-3PN package ·Built-in.
2SD1441 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
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DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Mini.
2SD1444 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB953, 2SB953A
Silicon PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1444 and 2SD1444A
0.7±0.1
Unit: mm.
2SD1444 - SILICON POWER TRANSISTOR
(SavantIC)
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DESCRIPTION ·With TO-220Fa package .. ·Low collector sat.
2SD1444 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1444
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Vo.
2SD1444A - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB953, 2SB953A
Silicon PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1444 and 2SD1444A
0.7±0.1
Unit: mm.
