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2SD144 - NPN Transistor

2SD144 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD144 .
DC Current Gain -hFE = 40(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min). With TO-66 Package. Minimum Lot-t.

2SD144 Applications

* Designed for use in power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.0 A ICM Collector Current-P

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Datasheet Details

Part number
2SD144
Manufacturer
INCHANGE
File Size
176.88 KB
Datasheet
2SD144-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD144-like datasheet