2SD1446 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 2SD1446
Manufacturer: INCHANGE
File Size: 198.33 KB
Datasheet: 2SD1446-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplification applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collecto

2SD1446 Distributors

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2SD1446 NPN Transistor INCHANGE

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