* q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat):
2SD1894
Panasonic Semiconductor
54.51 KB
Silicon pnp transistor.
Power Transistors
2SD1894
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1254
Unit: mm
15.0±0.3 11.0.
📁 Related Datasheet
2SD1890 - NPN Transistor
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isc Silicon NPN Darlington Power Transistor
2SD1890
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·.
2SD1890 - Silicon NPN Transistor
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Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaod.
2SD1891 - NPN Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SD1892 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1252
10.0±0.2 5.5±0.2 2.7±0.
2SD1892 - Silicon PNP Transistor
(Panasonic Semiconductor)
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2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1252
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2SD1892 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1892
..
DESCRIPTION ·With TO-220Fa package ·High D.
2SD1892 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1892
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) .
2SD1893 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1893
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1253
Unit: mm
15.0±0.3 11.0.
