* Large collector power dissipation PC
* High collector-emitter voltage (Base open) VCEO
* Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.4±0.08 1.5±0.1 3˚ 0.4 max. 2.6±0.1 Unit: mm
2SD875
Panasonic Semiconductor
99.01 KB
Silicon npn transistor.
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Transistors
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification Complementary to 2SB0767 (2.
📁 Related Datasheet
2SD870 - NPN Transistor
(Toshiba)
:
SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD870
COLOR TV HORIZONTAL OUTPUT APPLICATIONS.
FEATURES
• High Voltage : V CBO=1500V • Low Saturation Vol.
2SD870 - NPN Transistor
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD870
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low C.
2SD870 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD870
..
DESCRIPTION ·With TO-3 package ·Built-in da.
2SD871 - NPN Transistor
(Toshiba)
2SD871
SILICON NPN TRIPLE DIFFUSED MESA TYPE
COLOR TV HORIZONTAL OUTPUT APPLICATIONS.
FEATURES
• High Voltage : VCB0=1500V
• Low Saturation Volta.
2SD871 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: .
2SD871 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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DESCRIPTION ·With TO-3 package ·Built-in da.
2SD873 - NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
2SD873
HIGH POWER AMPLIFIER APPLICATIONS
HIGH POWER SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS.
REGULAT.
2SD873 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD873
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Curre.
