Part number:
2SD870
Manufacturer:
File Size:
111.73 KB
Description:
Npn transistor.
* High Voltage : V CBO=1500V
* Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A)
* High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A)
* Built-in Damper Type.
* Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QU
2SD870
111.73 KB
Npn transistor.
📁 Related Datasheet
2SD870 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD870
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low C.
2SD870 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD870
..
DESCRIPTION ·With TO-3 package ·Built-in da.
2SD871 - NPN Transistor
(Toshiba)
2SD871
SILICON NPN TRIPLE DIFFUSED MESA TYPE
COLOR TV HORIZONTAL OUTPUT APPLICATIONS.
FEATURES
• High Voltage : VCB0=1500V
• Low Saturation Volta.
2SD871 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: .
2SD871 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD871
..
DESCRIPTION ·With TO-3 package ·Built-in da.
2SD873 - NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
2SD873
HIGH POWER AMPLIFIER APPLICATIONS
HIGH POWER SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS.
REGULAT.
2SD873 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD873
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Curre.
2SD874 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD874, 2SD874A
Silicon NPN epitaxial planer type
For low-frequency power amplification Complementary to 2SB766 and 2SB766A
Unit: mm
s Fe.