2SD870 Datasheet - Toshiba

2SD870 NPN Transistor

2SD870 Features

* High Voltage : V CBO=1500V

* Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A)

* High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A)

* Built-in Damper Type.

* Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QU

Datasheet Details

2SD870

111.73 KB

Npn transistor.

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