2SD878 Datasheet - Toshiba

2SD878 NPN Transistor

2SD878 Features

* High Power Dissipation : F C =115W (Tc=25°C)

* High Collector Current : I C=15A

* Low Saturation Voltage : V CE ( sat )=0. 3V (Typ. ) (I C=4A) INDUSTRIAL APPLICATIONS Unit in mm j2fe5.0MAX. ^gfeLOMA , ^ _, -1-0.09 ,01.0

* 0.04 30.2±0.2 ia9±a24 iOt- cicS + 1 MAXIM

Datasheet Details

2SD878

115.16 KB

Npn transistor.

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