2SD818 Datasheet - Toshiba

2SD818 NPN Transistor

2SD818 Features

* High Voltage : VCBO =1500V

* Low Saturation Voltage : VCE ( sat )=4V (Typ.)

* High speed : t f =0.5ys (Typ.)

* Glass Passivated Collector-Base Junction. Unit in mm JZf25.0MAX. ^21.0MAX. 3 +0.09 01.0

* 0.03 30.2 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERI

Datasheet Details

2SD818

89.98 KB

Npn transistor.

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2SD818 2SD818 NPN Transistor Toshiba

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