2SD803 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 2000 (Min) @ IC =1 Adc. Collector-Emitter Breakdown Voltage- V(BR)CEO=.

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Datasheet Specifications

Part number: 2SD803
Manufacturer: INCHANGE
File Size: 200.26 KB
Datasheet: 2SD803-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 8 A IB Base Current -Continuous

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2SD803 NPN Transistor INCHANGE

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