2SD807 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD807 .
High Breakdown Voltage- : VCBO= 1500V (Min). Low collector saturation voltage. With TO-3 Package. Minimum Lot-to-Lot variations for r.

📥 Download Datasheet

2SD807 Datasheet Preview — Preview of 2SD807 PDF

Datasheet Specifications

Part number: 2SD807
Manufacturer: INCHANGE
File Size: 208.95 KB
Datasheet: 2SD807-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Cont

2SD807 Distributors

📁 Related Datasheet

2SD809 2SD811 2SD813 2SD814 2SD814A 2SD817

📌 All Tags

2SD807 NPN Transistor INCHANGE

INCHANGE 2SD807-like datasheet