Datasheet4U Logo Datasheet4U.com

2SD807 - NPN Transistor

2SD807 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD807 .
High Breakdown Voltage- : VCBO= 1500V (Min). Low collector saturation voltage. With TO-3 Package. Minimum Lot-to-Lot variations for r.

2SD807 Applications

* Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Cont

📥 Download Datasheet

Preview of 2SD807 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD807
Manufacturer
INCHANGE
File Size
208.95 KB
Datasheet
2SD807-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD809 - NPN Transistor (ETC)
  • 2SD811 - Silicon NPN Transistor (Toshiba)
  • 2SD813 - Si NPN Transistor (Panasonic Semiconductor)
  • 2SD814 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD814A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD817 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD818 - NPN Transistor (Toshiba)
  • 2SD819 - NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD807-like datasheet