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Part number:
2SD809
Manufacturer:
ETC
File Size:
69.21kb
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📄 Datasheet
Description:
Npn transistor.
2SD800 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD800
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 750V (Min) ·High Switching Speed ·Low co.
2SD803 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 2000 (Min) @ IC =1 Adc ·.
2SD807 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD807
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Low collector saturation vo.
2SD811 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD81
HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES
• High Voltage : VCBO=900V • High Peak Current Cap.
2SD811 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD811
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 900V (Min) ·High Switching Speed ·Low co.
2SD812 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Ope.
2SD813 - Si NPN Transistor
(Panasonic Semiconductor)
.
2SD814 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
Unit: mm
s Feature.
2SD814A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
Unit: mm
s Feature.
2SD817 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD817
..
DESCRIPTION ·With TO-3 package ·High voltag.
