Datasheet Details
- Part number
- 2SD812
- Manufacturer
- INCHANGE
- File Size
- 209.54 KB
- Datasheet
- 2SD812-INCHANGE.pdf
- Description
- NPN Transistor
2SD812 Description
isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min).
Good Linearity of hFE.
Wide Area of Safe Operation.
Complement to Type 2SB.
2SD812 Applications
* High power amplifier applications.
* Suitable for 15~20W home stereo output amplifier and
voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
C
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