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2SD812 - NPN Transistor

2SD812 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2SB.

2SD812 Applications

* High power amplifier applications.
* Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC C

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Datasheet Details

Part number
2SD812
Manufacturer
INCHANGE
File Size
209.54 KB
Datasheet
2SD812-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD812-like datasheet