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2SD812 Datasheet - INCHANGE

2SD812 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB747 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High power amplifier applications. *.

2SD812-INCHANGE.pdf

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Datasheet Details

Part number:

2SD812

Manufacturer:

INCHANGE

File Size:

209.54 KB

Description:

Npn transistor.

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