2SD812 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2SB.

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Datasheet Specifications

Part number: 2SD812
Manufacturer: INCHANGE
File Size: 209.54 KB
Datasheet: 2SD812-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power amplifier applications.
* Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC C

2SD812 Distributors

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2SD812 NPN Transistor INCHANGE

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