Datasheet4U Logo Datasheet4U.com

2SD819

NPN Transistor

2SD819 Features

* High Voltage . Low Saturation Voltage High Speed V C BO=1500V V CE(sat)=4V (Typ.) (I C =3A, I B =0.8A) tf =1.0ys (Max.) (I CP =3A, I B i(end)=0-8A) Glass Passivated Collector-Base Junction. Unit in mm ;ZS25.0MAX < X

* GfeLOMAX. ^^"CO 1

* TT+H + 0.09 04>.ti

* 0.03

2SD819 Datasheet (91.66 KB)

Preview of 2SD819 PDF

Datasheet Details

Part number:

2SD819

Manufacturer:

Toshiba ↗

File Size:

91.66 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD811 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD81 HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES • High Voltage : VCBO=900V • High Peak Current Cap.

2SD811 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD811 DESCRIPTION ·High Breakdown Voltage- : VCBO= 900V (Min) ·High Switching Speed ·Low co.

2SD812 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Ope.

2SD813 - Si NPN Transistor (Panasonic Semiconductor)
.

2SD814 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Feature.

2SD814A - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Feature.

2SD817 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD817 .. DESCRIPTION ·With TO-3 package ·High voltag.

2SD817 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD817 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation vo.

TAGS

2SD819 NPN Transistor Toshiba

Image Gallery

2SD819 Datasheet Preview Page 2

2SD819 Distributor