2SD821 Datasheet - Toshiba

2SD821 NPN Transistor

2SD821 Features

* High Voltage : VCBO=1500V

* Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A)

* High Speed : t f =1.0us (Max.)

* Glass Passivated Collector-Base Junction. Unit in mm p

* 25.0MAX. £21.0 MAX . fQ09 £1.0-003 3Q2±02 MAXIMUM RATINGS (Ta=25°C) CHARACTERIS

Datasheet Details

2SD821

90.81 KB

Npn transistor.

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2SD821 2SD821 NPN Transistor Toshiba

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