2SD841
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Silicon npn transistor.
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2SD841 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD841
DESCRIPTION ·High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.) ·High Switching Speed ·Low Collect.
2SD841 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD841
..
DESCRIPTION ·With TO-220 package ·Low colle.
2SD842 - Silicon NPN Transistor
(Toshiba Semiconductor)
SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES
. High Collector Current :
= 30A
. High DC Curre.
2SD843 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A ·High Co.
2SD843 - Silicon NPN Transistor
(Toshiba)
:
I
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Saturation Voltage : VC E(sa.
2SD844 - NPN Transistor
(Toshiba)
I: .
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION.
FEATURES • High Collector Current : I C=7A • .
2SD844 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD844
..
DESCRIPTION ·With TO-3P(I) package ·Complem.
2SD844 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage-
:.
2SD845 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SB.
2SD845 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD845
..
DESCRIPTION ·With MT-200 package ·Complemen.
