Part number:
2SD842
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
109.56 KB
Description:
Silicon npn transistor.
* . High Collector Current : = 30A . High DC Current Gain : hFE =1000(Min.),(vCE =5V, I C =20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector
2SD842
Toshiba ↗ Semiconductor
109.56 KB
Silicon npn transistor.
📁 Related Datasheet
2SD841 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD841
DESCRIPTION ·High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.) ·High Switching Speed ·Low Collect.
2SD841 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD841
..
DESCRIPTION ·With TO-220 package ·Low colle.
2SD841 - Silicon NPN Transistor
(Toshiba)
21 I
I
SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD841
HIGH VOLTAGE SWITCHING APPLICATIONS-
FEATURES: . High Voltage : VCB0=800V . Low VcE(sat) : VCE.
2SD843 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A ·High Co.
2SD843 - Silicon NPN Transistor
(Toshiba)
:
I
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Saturation Voltage : VC E(sa.
2SD844 - NPN Transistor
(Toshiba)
I: .
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION.
FEATURES • High Collector Current : I C=7A • .
2SD844 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD844
..
DESCRIPTION ·With TO-3P(I) package ·Complem.
2SD844 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage-
:.
