2SD842
Toshiba ↗ Semiconductor
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Silicon npn transistor.
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DESCRIPTION ·High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.) ·High Switching Speed ·Low Collect.
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HIGH VOLTAGE SWITCHING APPLICATIONS-
FEATURES: . High Voltage : VCB0=800V . Low VcE(sat) : VCE.
2SD843 - NPN Transistor
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DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage
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HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
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FEATURES • High Collector Current : I C=7A • .
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2SD844 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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:.
2SD845 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SB.
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DESCRIPTION ·With MT-200 package ·Complemen.
