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2SD849 - NPN Transistor

2SD849 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Low Collector Saturation Voltage- : VCE(sat)= 5. Minimum Lot-to-Lot variati.

2SD849 Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

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Datasheet Details

Part number
2SD849
Manufacturer
INCHANGE
File Size
199.28 KB
Datasheet
2SD849-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD849-like datasheet