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2SD849 Datasheet - INCHANGE

2SD849 NPN Transistor

*High Breakdown Voltage- : VCBO= 1500V (Min) *Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for line-operated horizontal deflection output applications. ABSO.

2SD849-INCHANGE.pdf

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Datasheet Details

Part number:

2SD849

Manufacturer:

INCHANGE

File Size:

199.28 KB

Description:

Npn transistor.

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