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2SD845 - NPN Transistor

2SD845 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min). Good Linearity of hFE. Complement to Type 2SB755. Minimum Lot-to-Lot variat.

2SD845 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous

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Datasheet Details

Part number
2SD845
Manufacturer
INCHANGE
File Size
212.97 KB
Datasheet
2SD845-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD845-like datasheet