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2SD841 - NPN Transistor

2SD841 Description

isc Silicon NPN Power Transistor 2SD841 .
High Collector-Base Breakdown Voltage : V(BR)CBO= 800V(Min. High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 1.

2SD841 Applications

* Designed for voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1.5

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Datasheet Details

Part number
2SD841
Manufacturer
INCHANGE
File Size
204.27 KB
Datasheet
2SD841-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD841-like datasheet