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B1253 2SB1253

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Description

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 12.5 3.5 15.0±0.2 .

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Features

* q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <
* 2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.

B1253 Distributors

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2SB1253 Panasonic Semiconductor
Panasonic Semiconductor B1253-like datasheet