B1254
Panasonic Semiconductor
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2sb1254.
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B125-C1000 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
B40-B380/C1000
PRV : 100 - 900 Volts Io : 1.0 Amperes
FEATURES :
* * * * * * High case dielectric strength High surge current capability High reliabil.
B125-C1500 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
B40 - B380/C1500R
PRV : 100 - 900 Volts Io : 1.5 Amperes
FEATURES :
* * * * * * High case dielectric strength High surge current capability High relia.
B125-C1500R - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
.eicsemi.
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
B40 - B380/C1500R
SILICON BRIDGE RECTIFIERS
PRV : 100 - 900 Volts Io : 1.5 Ampere.
B1250T - SMD Power Cross Protection Fuse
(BOURNS)
Features
n For use in telemunication circuit applications requiring low current protection with high surge tolerance
n Overcurrent protection to Te.
B1252 - Power Transistors
(Panasonic)
Power Transistors
2SB1252
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1892
10.0±0.2 5.5±0.2
Unit: mm
4.
B1253 - 2SB1253
(Panasonic Semiconductor)
Power Transistors
2SB1253
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1893
Unit: mm
12.5 3.5 15.0±0.2 .
B1255 - 2SB1255
(Panasonic)
Power Transistors
2SB1255
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1895
Unit: mm
12.5 3.5 15.0±0.2 .
B1258 - 2SB1258
(Sanken electric)
(3 k Ω)(1 0 0 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=2.
B125C1000 - 1 Amp. Glass Passivated Bridge Rectifier
(FAGOR)
B40C1000 B380C1000
1 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
Sufflix A B
L ± 0.5 4 3
Voltage 100 to 900 V.
Current 1..
B125C1000G - Glass Passivated Single-Phase Bridge Rectifier
(Vishay)
B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G
.vishay.
Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
+~
+.