* q High transition frequency fT. 13.5±0.5 / s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 30 V c e. d typ Collector to emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2.3±0.2 3 V le on Collector current
C1215
Panasonic Semiconductor
227.64 KB
Silicon npn transistor.
Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
.
📁 Related Datasheet
C1210 - Process C1210 CMOS 1.2mm Zero Threshold Devices
(IMP Inc)
® ISO 9001 Registered
Process C1210
CMOS 1.2µ m Zero Threshold Devices
Electrical Characteristics
N-Channel Transistor Threshold Voltage Body Factor .
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C1210C102J2GAC - CERAMIC CHIP CAPACITORS
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CERAMIC CHIP CAPACITORS
FEATURES
• C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-p.
C1210C102J5GAC - CERAMIC CHIP CAPACITORS
(Kemet Corporation)
CERAMIC CHIP CAPACITORS
FEATURES
• C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-p.
C1210C102K2GAC - CERAMIC CHIP CAPACITORS
(Kemet Corporation)
CERAMIC CHIP CAPACITORS
FEATURES
• C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-p.
C1210C102K5GAC - CERAMIC CHIP CAPACITORS
(Kemet Corporation)
CERAMIC CHIP CAPACITORS
FEATURES
• C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-p.
C1210C103G5GAC - CERAMIC CHIP CAPACITORS
(Kemet Corporation)
CERAMIC CHIP CAPACITORS
FEATURES
• C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-p.
C1210C103J1GAC - CERAMIC CHIP CAPACITORS
(Kemet Corporation)
CERAMIC CHIP CAPACITORS
FEATURES
• C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-p.
