* q High transition frequency fT. 13.5±0.5 / s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 30 V c e. d typ Collector to emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2.3±0.2 3 V le on Collector current
C1215
Panasonic Semiconductor
227.64 KB
Silicon npn transistor.
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 .
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