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Transistors
2SC1360, 2SC1360A
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
5.9±0.2
Unit: mm
4.9±0.2
■ Features
8.6±0.2
• High transition frequency fT
• Large collector power dissipation PC
13.5±0.5 0.7–+00..23
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage 2SC1360 VCBO
50
V
pe) (Emitter open)
2SC1360A
60
nc d ge. ed ty Collector-emitter voltage 2SC1360 VCEO
45
(3.2)
V
sta tinu (Base open)
2SC1360A
60
a e cycle iscon Emitter-base voltage (Collector open) VEBO
4
V
life d, d Collector current
IC
50
mA
n u duct type Collector power dissipation
PC
1
W
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
0.45+–00..
C1360 Datasheet
