Part C1318
Description Silicon NPN Transistor
Category Transistor
Manufacturer Panasonic
Size 64.75 KB
Panasonic
C1318

Overview

  • Low collector to emitter saturation voltage VCE(sat)
  • Complementary pair with 2SA719 and 2SA720
  • 0±0.2 0.7±0.1
  • 1±0.2 Unit: mm 4.0±0.2
  • 7±0.2 13.5±0.5 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to 2SC1317 VCBO 30 V base voltage 2SC1318 60 Collector to 2SC1317 VCEO 25 V emitter voltage 2SC1318 50 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VEBO 7 V ICP 1 A IC 500 mA PC 625 mW Tj 150 °C Tstg -55 to +150 °C
  • 45+-00..115 (1.27) (1.27)
  • 45+-00..115
  • 3±0.2 123 2.54±0.15 1: Emitter 2: Collector 3: Base TO-92 Package I Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to 2SC1317 VCBO IC = 10 µA, IE = 0 30 base voltage 2SC1318 60 Collector to 2SC1317 VCEO IC = 10 mA, IB = 0 25 emitter voltage 2SC1318 50 Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance VEBO IE = 10 µA, IC = 0 7 hFE1 *2 VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA VBE(sat) IC = 300 mA, IB = 30 mA fT VCB = 10 V, IE = -50 mA, f = 200 MHz Cob VCB = 10 V, IE = 0, f = 1 MHz Note) *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Typ Max 0.1 340
  • 35 0.6
  • 1 1.5 200 6 15 Unit µA V V V V V MHz pF 1