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Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720
I Features • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720
5.0±0.2 0.7±0.1
5.1±0.2
Unit: mm 4.0±0.2
0.7±0.2 13.5±0.5
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to
2SC1317
VCBO
30
V
base voltage
2SC1318
60
Collector to
2SC1317
VCEO
25
V
emitter voltage 2SC1318
50
Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
VEBO
7
V
ICP
1
A
IC
500
mA
PC
625
mW
Tj
150
°C
Tstg
−55 to +150
°C
0.45+–00..115
(1.27)
(1.27)
0.45+–00..115
2.
C1317 Datasheet
