* High breakdown voltage: 1 500 V
* High-speed switching
* Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Sol
C5622
Panasonic Semiconductor
179.37 KB
2sc5622.
Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5.
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