* q Wide area of safe operation (ASO) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SD1251 base voltage 2SD1251A VCBO 60 80 Collector
D1251
Panasonic Semiconductor
48.88 KB
2sd1251.
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.
📁 Related Datasheet
D1251A - 2SD1251A
(Panasonic Semiconductor)
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.
D1251S45T - Fast Diode
(eupec)
European PowerSemiconductor and Electronics Company
Marketing Information D 1251 S 45 T
∅ 75 C
14+-0.5
∅ 77 max.
A
∅ 48-0.1
2 center holes ∅ 3.5 .
D1254 - 2SD1254
(Panasonic Semiconductor)
Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB931
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1..
D1256 - 2SD1256
(Panasonic Semiconductor)
Power Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB933
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.
D1257 - 2SD1257
(Panasonic)
Power Transistors
2SD1257, 2SD1257A
.. Silicon NPN epitaxial planar type
For power switching Complementary to 2SB934
10.0±0.3
8.5±.
D1259 - 2SD1259
(Panasonic Semiconductor)
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.0±0..
D125F06 - (D125F06 - D125F10) RECTIFIER DIODE
(Voltage Multipliers)
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D125FF06 D125FF08 600 V - 1,000 V Rectifiers D125F06 - D125F10 3.0 A - 4.0 A Forward Current
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D125F08 - (D125F06 - D125F10) RECTIFIER DIODE
(Voltage Multipliers)
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D125FF06 D125FF08 600 V - 1,000 V Rectifiers D125F06 - D125F10 3.0 A - 4.0 A Forward Current
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