* q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 1.3 150
* 55 to +
D1259
Panasonic Semiconductor
52.98 KB
2sd1259.
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.0±0..
📁 Related Datasheet
D1251 - 2SD1251
(Panasonic Semiconductor)
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.
D1251A - 2SD1251A
(Panasonic Semiconductor)
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.
D1251S45T - Fast Diode
(eupec)
European PowerSemiconductor and Electronics Company
Marketing Information D 1251 S 45 T
∅ 75 C
14+-0.5
∅ 77 max.
A
∅ 48-0.1
2 center holes ∅ 3.5 .
D1254 - 2SD1254
(Panasonic Semiconductor)
Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB931
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1..
D1256 - 2SD1256
(Panasonic Semiconductor)
Power Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB933
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.
D1257 - 2SD1257
(Panasonic)
Power Transistors
2SD1257, 2SD1257A
.. Silicon NPN epitaxial planar type
For power switching Complementary to 2SB934
10.0±0.3
8.5±.
D125F06 - (D125F06 - D125F10) RECTIFIER DIODE
(Voltage Multipliers)
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D125FF06 D125FF08 600 V - 1,000 V Rectifiers D125F06 - D125F10 3.0 A - 4.0 A Forward Current
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D125F08 - (D125F06 - D125F10) RECTIFIER DIODE
(Voltage Multipliers)
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D125FF06 D125FF08 600 V - 1,000 V Rectifiers D125F06 - D125F10 3.0 A - 4.0 A Forward Current
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