* (23.4) 1 2SK3637
* Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ
K3637
Panasonic Semiconductor
84.29 KB
2sk3637.
Power MOSFETs
2SK3637
Silicon N-channel power MOSFET
15.5±0.5
Unit: mm
φ 3.2±0.1 5˚ 3.0±0.3 5˚
For PDP/For high-speed switching
(10.0) 26.5±0.5
(4.
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