K3637 Datasheet - Panasonic Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

K3637 2SK3637

Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4.

K3637_PanasonicSemiconductor.pdf

K3637 Datasheet Preview — Preview of K3637 PDF

Datasheet Details

Part number:

K3637

Manufacturer:

Panasonic Semiconductor

File Size:

84.29 KB

Description:

2SK3637

Features

* (23.4) 1 2SK3637
* Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

K3637 Distributors

📁 Related Datasheet

K363 K3630 K3631 K3638 K3639 K360

📌 All Tags

K3637 2SK3637 Panasonic Semiconductor

Panasonic Semiconductor K3637-like datasheet