K3637 - 2SK3637

Panasonic Semiconductor

Datasheet Details

acteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ 85 30 12 1.25 41.6 Max Unit nC nC nC °C/W °C/W Note) Measuring methods are based on.

📁 K3637 Similar Datasheet

Other Datasheets by Panasonic Semiconductor

Published: May 21, 2010 |