Click to expand full text
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK363
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SK363
Unit: mm
• High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
−40
V
10
mA
400
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
K363 Datasheet
