LN55 - GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN55
Manufacturer	Panasonic ↗ Semiconductor
File Size	38.03 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN55_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF.

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Published: Mar 22, 2005 |