Part number:
LN55
Manufacturer:
Panasonic Semiconductor
File Size:
38.03 KB
Description:
Gaas infrared light emitting diode.
Datasheet Details
LN55 Features
* High-power output, high-efficiency : PO = 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15
Datasheet Details
LN55
Panasonic Semiconductor
38.03 KB
Gaas infrared light emitting diode.
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