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Variable Capacitance Diodes
MA26V01
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD
1.00±0.05
0.60±0.05
3
2
1
0.39+0.01 −0.03
0.25±0.05
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.25±0.05 1
3 0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode ML3-N2 Package
Marking Symbol: 2D
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Symbol IR CD1V CD3V Capacitance ratio Series resistance
*
Conditions VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz
Min
Typ
Max 10
15.0 5.
MA26V01 Datasheet
