Click to expand full text
ESD Diodes
MAZMxxxH Series
Silicon planar type
1.60±0.05
Unit: mm
0.55±0.05
For surge absorption circuit
1.60±0.05 1.20±0.05
1.00±0.05
5
4
1.20±0.05 1.60±0.05
■ Features
• Four elements anode-common type • Power dissipation PD : 150 mW
1
2
3
5°
0.10±0.03
0.20±0.05
Power dissipation
*
PD Tj Tstg
150 150 −55 to +150
mW °C °C
Junction temperature Storage temperature
Note) *: PD = 150 mW achieved with a printed circuit board.
1 : Cathode 1 4 : Cathode 3 2 : Anode 1, 2, 3, 4 5 : Cathode 4 3 : Cathode 2 SSMini5-F1 Package
Internally connected circuit
5 4
1
0 ∼ 0.01
Parameter
Symbol
Rating
Unit
2
3
■ Common Electrical Characteristics Ta = 25°C ± 3°C
Parameter www.DataSheet4U.