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MIP0210SY Silicon MOS IC

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Description

Intelligent Power Devices (IPDs) MIP0210SY Silicon MOS IC s .

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Features

* q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 1.4±0

Applications

* φ3.7±0.1 13.5±0.5 Solder Dip s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol Ratings 700 8 Drain voltage VD VC ID IC Control voltage Output current Control current Channel temperature Storage temperature s Block Diagram Control pin Shunt regulator Pl + PWM control current M

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