OH10008 Datasheet - Panasonic Semiconductor

OH10008 GaAs Hall Device

GaAs Hall Devices OH10008 GaAs Hall Device Magnetic sensor Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) Input resistance: typ. 750 kΩ Satisfactory linearity of GaAs hall voltage with respect to the magnetic field Small temperature coefficient of the hall voltage: β ≤ 0.06%/°C Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 1.45 ± 0.05 0.9 ± 0.05 Unit : mm 4 1 3 2.

OH10008 Features

* 1 OH10008 PD  T a 200 180 240 B = 1 kG IC = 6 mA 200 GaAs Hall Devices VH  Ta 1 600 1 400 RIN  Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Input resistance RIN (Ω)

* 40 Hall voltage VH (mV) 1 200 1 000 800 600 400 200 160

OH10008_PanasonicSemiconductor.pdf