OH10003 - GaAs Hall Device

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Panasonic Semiconductor

Part number	OH10003
Manufacturer	Panasonic Semiconductor
File Size	48.74 KB
Description	GaAs Hall Device
Datasheet	OH10003 Datasheet
Additional preview pages of the OH10003 datasheet.

Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T).
Input resistance: typ. 0.85 kΩ.
Satisfactory linearity of GaAs hall voltage with respect to the magnetic field.
Small temperature coefficient of the hall voltage: β ≤.
0.06%/°C.
Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package. 2.9 ± 0.2 0.65 ± 0.15 2.8.
0.3 1.5 + 0.2.
0.3 + 0.2 Unit : mm 0.65 ± 0.15 0.5 R 0.

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Published: May 13, 2005 |