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OH10008 - GaAs Hall Device

Key Features

  • 1 OH10008 PD  T a 200 180 240 B = 1 kG IC = 6 mA 200 GaAs Hall Devices VH  Ta 1 600 1 400 RIN  Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Input resistance RIN (Ω).
  • 40 Hall voltage VH (mV) 1 200 1 000 800 600 400 200 160 120 80 40 0 0 40 80 120 0.
  • 40 0 40 80 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Ambient temperature Ta (°C) VH  B 1 600 1 400 VC = 6 V Ta = 25°C 320 280.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs Hall Devices OH10008 GaAs Hall Device Magnetic sensor • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 1.45 ± 0.05 0.9 ± 0.05 Unit : mm 4 1 3 2 0.6 ± 0.1 1.45 ± 0.05 0.8 ± 0.1 2.85 ± 0.25 5 0.2 max. 0.26 ± 0.05 5 0 to 0.15 I Applications • Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and other portable equipment) • Automotive equipment • Measurement equipment • Applicable to wide-varying field (OA equipment, etc.) 0.5 ± 0.1 φ 1.0 ± 0.