PUB4702 Datasheet - Panasonic Semiconductor

PUB4702, Silicon N-Channel Power F-MOS FET

Power Transistor Arrays (F-MOS FETs) PUB4702 Silicon N-Channel Power F-MOS FET s .

Features

* q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q Incorporating built-in zener diodes 1.65±0.2 9.5±0.2 unit: mm 25.3±0.2 4.0±0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Cont

Applications

* 0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25 0.8±0.25 0.5±0.15 C1.5±0.5 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 35 ± 10 ±15 ±1 ±2 2.5 15 3.5 150

PUB4702_PanasonicSemiconductor.pdf