* High forward current transfer ratio hFE which has satisfactory linearity
* Low collector-emitter saturation voltage VCE(sat)
* PUB4110 (PU4110): NPN 4 elements PUB4410 (PU4410): NPN 2 elements × 2 9.5±0.2 8.0±0.2 Unit: mm 25.3±0.2 4.0±0.2 0.8±0.25 0.5±0.15 1.0±0.25 2.54
PUB4110
Panasonic
119.17 KB
(pub4110 / pub4410) composite device - power transistor arrays.
Power Transistor Arrays
PUB4110 (PU4110), PUB4410 (PU4410)
Silicon NPN triple diffusion planar type
For power amplification/switching Complementary t.
📁 Related Datasheet
PUB4301 - Silicon NPN / PNP epitaxial planar type Power transistor
(Panasonic)
PUB4301
NPN/PNP
25.3±0.2
Unit : mm
4.0±0.2
9.5±0.2 1.65±0.2 8.0±0.2
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PUB4410 - (PUB4110 / PUB4410) Composite Device - Power Transistor Arrays
(Panasonic)
Power Transistor Arrays
PUB4110 (PU4110), PUB4410 (PU4410)
Silicon NPN triple diffusion planar type
For power amplification/switching Complementary t.
PUB4701 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power Transistor Arrays (F-MOS FETs)
PUB4701
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switchi.
PUB4702 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power Transistor Arrays (F-MOS FETs)
PUB4702
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switchi.
PU1101 - Transistors
(Panasonic)
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PU150-xx - Switching power supply
(IPiQ)
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PU150KIT - Impact Printer Kit
(Axiohm)
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PU1BLWH - Ultra Fast Surface Mount Rectifier
(Taiwan Semiconductor)
PU1BLWH – PU1DLWH
Taiwan Semiconductor
1A, 100V - 200V Ultra Fast Surface Mount Rectifier
FEATURES
● AEC-Q101 qualified ● Planar technology ● Low po.
