UN2123 Silicon PNP epitaxial planer transistor

Panasonic Semiconductor

Description

Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor For digital circuits s q q .
emitter saturation voltage VCE(sat) (V) Ta=25˚C. 200 Forward current transfer ratio hFE. 30. 10. 3. 1.

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Datasheet Specifications

Part number: UN2123
Manufacturer: Panasonic Semiconductor
File Size: 84.91 KB
Datasheet: UN2123_PanasonicSemiconductor.pdf
Description: Silicon PNP epitaxial planer transistor

Features

* Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8
* 0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5
* 0.05 +0.25 0

Applications

* emitter saturation voltage VCE(sat) (V) Ta=25˚C
* 200 Forward current transfer ratio hFE
* 30
* 10
* 3
* 1
* 0.3
* 0.1
* 0.03
* 0.01
* 1 Ta=75˚C 25˚C
* 25˚C 200 Collector current IC (mA) IB=
* 1.2mA
* 16

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UN2123 Silicon PNP epitaxial planer transistor Panasonic Semiconductor

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