UN2123 Datasheet (Panasonic Semiconductor) - Silicon PNP epitaxial planer transistor

UN2123, Silicon PNP epitaxial planer transistor

emitter saturation voltage VCE(sat) (V) Ta=25˚C *200 Forward current transfer ratio hFE *30 *10 *3 *1 *0.3 *0.1 *0.03 *0.01 *1 Ta=75˚C 25˚C *25˚C 200 Collector current IC (mA) IB= *1.2mA *16

UN2123 Features

* Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8

* 0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5

* 0.05 +0.25 0