UN212Y Datasheet (Panasonic Semiconductor) - Silicon PNP epitaxial planer transistor

UN212Y, Silicon PNP epitaxial planer transistor

emitter saturation voltage VCE(sat) (V) Ta=25˚C *200 Forward current transfer ratio hFE *30 *10 *3 *1 *0.3 *0.1 *0.03 *0.01 *1 Ta=75˚C 25˚C *25˚C 200 Collector current IC (mA) IB= *1.2mA *16

UN212Y Features

* Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8

* 0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5

* 0.05 +0.25 0