UN212Y - Silicon PNP epitaxial planer transistor

Panasonic Semiconductor

UN212Y Datasheet Preview — Preview of UN212Y PDF

Datasheet Details

Part number	UN212Y
Manufacturer	Panasonic ↗ Semiconductor
File Size	84.91 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	UN212Y_PanasonicSemiconductor.pdf

UN212Y Product details

Description

emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 1 Ta=75˚C 25˚C 25˚C 200 Collector current IC (mA) IB= 1.2mA 160 1.0mA 0.8mA 0.6mA 80 0.4mA 40 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75˚C 25˚C

Features

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8.
0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5.
0.05 +0.25 0.95 2.9.
0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 s Resistance by Part Number 1.1.
0.1 +0.2 q q q q q q UN2121 UN2122 UN2123 UN2124 UN212X UN212Y Marking Symbol (R1) 7A 2.

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Other Datasheets by Panasonic Semiconductor

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Published: Apr 17, 2005 |