XN111M Datasheet (Panasonic Semiconductor) - PNP epitaxial planer transistor

XN111M, PNP epitaxial planer transistor

Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN211M × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maxim

XN111M Features

* 1 Composite Transistors PT

* Ta 500 XN111M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC

* VCE 240

* 10 VCE(sat)

* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE