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XN111M PNP epitaxial planer transistor

XN111M Description

Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.6.

XN111M Features

* 1 Composite Transistors PT
* Ta 500 XN111M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 240
* 10 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE

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Datasheet Details

Part number
XN111M
Manufacturer
Panasonic Semiconductor
File Size
34.13 KB
Datasheet
XN111M_PanasonicSemiconductor.pdf
Description
PNP epitaxial planer transistor

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PNP epitaxial planer transistor Panasonic Semiconductor
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