XN1210 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN1210, Silicon NPN epitaxial planer transistor

Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 +0.2 s Basic Part Number of Element q 0.8 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO

XN1210 Features

* 1 Composite Transistors PT

* Ta 500 XN1210 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC

* VCE 60 VCE(sat)

* IC 100 hFE

* IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50